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Datasheets for H-PO

Datasheets found :: 963
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 2N3771 High-Power NPN Silicon Transistor Motorola
32 2N3772 High-Power NPN Silicon Transistor Motorola
33 2N3950 NPN silicon RF power transistor designed for high-power RF amplifier applications Motorola
34 2N4012 High-Power Silicon NPN Overlay RF Transistor RCA Solid State
35 2N4347 HIGH-POWER INDUSTRIAL TRANSISTORS Boca Semiconductor Corporation
36 2N4347 High-Power industrial transistor Motorola
37 2N4398 PNP SILICON HIGH-POWER TRANSISTORS Boca Semiconductor Corporation
38 2N4398 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
39 2N4398 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
40 2N4399 PNP SILICON HIGH-POWER TRANSISTORS Boca Semiconductor Corporation
41 2N4399 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
42 2N4399 High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices Motorola
43 2N5016 High-Power Silicon NPN Overlay RF Transistor RCA Solid State
44 2N5090 High-Power Silicon NPN Overlay RF Transistor RCA Solid State
45 2N5102 High-Power Silicon NPN Overlay RF Transistor RCA Solid State
46 2N5301 High-power NPN silicon transistor Motorola
47 2N5302 High-power NPN silicon transistor Motorola
48 2N5302 High-Power NPN Silicon Transistor ON Semiconductor
49 2N5302-D High-Power NPN Silicon Transistor ON Semiconductor
50 2N5303 High-power NPN silicon transistor Motorola
51 2N5575 High-power general purpose NPN transistor, metal case IPRS Baneasa
52 2N5576 High-power general purpose NPN transistor, metal case IPRS Baneasa
53 2N5577 High-power general purpose NPN transistor, metal case IPRS Baneasa
54 2N5578 High-power general purpose NPN transistor, metal case IPRS Baneasa
55 2N5579 High-power general purpose NPN transistor, metal case IPRS Baneasa
56 2N5580 High-power general purpose NPN transistor, metal case IPRS Baneasa
57 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
58 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
59 2N5630 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
60 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State


Datasheets found :: 963
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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