No. |
Part Name |
Description |
Manufacturer |
31 |
2N3771 |
High-Power NPN Silicon Transistor |
Motorola |
32 |
2N3772 |
High-Power NPN Silicon Transistor |
Motorola |
33 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
34 |
2N4012 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
35 |
2N4347 |
HIGH-POWER INDUSTRIAL TRANSISTORS |
Boca Semiconductor Corporation |
36 |
2N4347 |
High-Power industrial transistor |
Motorola |
37 |
2N4398 |
PNP SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
38 |
2N4398 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
39 |
2N4398 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
40 |
2N4399 |
PNP SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
41 |
2N4399 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
42 |
2N4399 |
High-power PNP silicon transistor, serves as direct replacements for germanium high-power devices |
Motorola |
43 |
2N5016 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
44 |
2N5090 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
45 |
2N5102 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
46 |
2N5301 |
High-power NPN silicon transistor |
Motorola |
47 |
2N5302 |
High-power NPN silicon transistor |
Motorola |
48 |
2N5302 |
High-Power NPN Silicon Transistor |
ON Semiconductor |
49 |
2N5302-D |
High-Power NPN Silicon Transistor |
ON Semiconductor |
50 |
2N5303 |
High-power NPN silicon transistor |
Motorola |
51 |
2N5575 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
52 |
2N5576 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
53 |
2N5577 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
54 |
2N5578 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
55 |
2N5579 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
56 |
2N5580 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
57 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
58 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
59 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
60 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
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