| No. |
Part Name |
Description |
Manufacturer |
| 121 |
HN2D02FUTW1T1 |
Ultra High Speed Switching Diodes |
ON Semiconductor |
| 122 |
HN2D03F |
Switching diode |
TOSHIBA |
| 123 |
HN2E04F |
Multi-chip discrete device (PNP + SW diode) |
TOSHIBA |
| 124 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 125 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 126 |
HN2S02FU |
Small-signal Schottky barrier diode |
TOSHIBA |
| 127 |
HN2S02JE |
Small-signal Schottky barrier diode |
TOSHIBA |
| 128 |
HN2S03FE |
Small-signal Schottky barrier diode |
TOSHIBA |
| 129 |
HN2S03FU |
Small-signal Schottky barrier diode |
TOSHIBA |
| 130 |
HN2S03T |
Small-signal Schottky barrier diode |
TOSHIBA |
| 131 |
HN2S04FU |
Small-signal Schottky barrier diode |
TOSHIBA |
| 132 |
HN2V02H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 133 |
IRHN2C50SE |
600V 50kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package |
International Rectifier |
| 134 |
LPC1112FHN24 |
16kB flash, 4kB SRAM, HVQFN24 package |
NXP Semiconductors |
| 135 |
LPC1112LVFHN24 |
16kB flash, 2kB SRAM, ADC, HVQFN24 package |
NXP Semiconductors |
| 136 |
LPC1114LVFHN24 |
32kB flash, 8kB SRAM, ADC, HVQFN24 package |
NXP Semiconductors |
| 137 |
M-FIAM3HN2 |
Military 270Vin Filter Input Attenuator Module |
Vicor Corporation |
| 138 |
M-FIAM5HN2 |
Military 28Vin Filter Input Attenuator Module |
Vicor Corporation |
| 139 |
PHN203 |
Dual N-channel TrenchMOS logic level FET |
Nexperia |
| 140 |
PHN203 |
Dual N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 141 |
PHN203 |
Dual N-channel enhancement mode TrenchMOS(tm) transistor |
Philips |
| 142 |
PHN205 |
Dual N-channel enhancement mode MOS transistor |
Philips |
| 143 |
PHN210 |
Dual N-channel enhancement mode TrenchMOS(TM) transistor |
Philips |
| 144 |
PHN210T |
Dual N-channel TrenchMOS intermediate level FET |
Nexperia |
| 145 |
PHN210T |
Dual N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
| 146 |
PHN210T |
Dual N-channel enhancement mode TrenchMOS(TM) transistor |
Philips |
| 147 |
URAM2HN2 |
Output Ripple Attenuation Module |
Vicor Corporation |
| 148 |
URAM3HN2 |
Output Ripple Attenuation Module |
Vicor Corporation |
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