| No. |
Part Name |
Description |
Manufacturer |
| 91 |
HN29V25611ABP |
AND Flash Memories |
Hitachi Semiconductor |
| 92 |
HN29V25611AT-50 |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
| 93 |
HN29V25611AT-50H |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
| 94 |
HN29V51211 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
Hitachi Semiconductor |
| 95 |
HN29V51211T-50 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
Hitachi Semiconductor |
| 96 |
HN29V51211T-50 |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
| 97 |
HN29V51211T-50H |
Memory>AG-AND / superAND Flash Memory>AG-AND Flash Memory |
Renesas |
| 98 |
HN29W12811 |
128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) |
Hitachi Semiconductor |
| 99 |
HN29W12811T-60 |
128M AND type Flash Memory More than 8/029-sector (135/657/984-bit) |
Hitachi Semiconductor |
| 100 |
HN29W25611 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 101 |
HN29W25611T |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 102 |
HN29W25611T-50 |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 103 |
HN29W25611T-50H |
256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) |
Hitachi Semiconductor |
| 104 |
HN2A01FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 105 |
HN2A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 106 |
HN2A26FS |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 107 |
HN2C01FE |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 108 |
HN2C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 109 |
HN2C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 110 |
HN2C10FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 111 |
HN2C11FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 112 |
HN2C12FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 113 |
HN2C12FU |
RF 2-in-1 Hybrid Transistors |
TOSHIBA |
| 114 |
HN2C13FT |
RF New Products |
TOSHIBA |
| 115 |
HN2C14FT |
RF New Products |
TOSHIBA |
| 116 |
HN2C26FS |
Transistor for low frequency small-signal amplification 2 in 1 |
TOSHIBA |
| 117 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 118 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 119 |
HN2D01JE |
Switching diode |
TOSHIBA |
| 120 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| | | |
