No. |
Part Name |
Description |
Manufacturer |
121 |
IRF1312 |
80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
122 |
IRF1312L |
80V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
123 |
IRF1312LPBF |
80V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
124 |
IRF1312PBF |
80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
125 |
IRF1312S |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
126 |
IRF1312SPBF |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
127 |
IRF1312STRL |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
128 |
IRF1312STRLPBF |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
129 |
IRF1312STRR |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
130 |
IRF132 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
131 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
132 |
IRF132 |
12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs |
Intersil |
133 |
IRF132 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
134 |
IRF132 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 12A |
Siliconix |
135 |
IRF1324 |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package |
International Rectifier |
136 |
IRF1324L |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package |
International Rectifier |
137 |
IRF1324LPBF |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package |
International Rectifier |
138 |
IRF1324PBF |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package |
International Rectifier |
139 |
IRF1324S |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package |
International Rectifier |
140 |
IRF1324S-7P |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free 7-Lead D2-Pak package |
International Rectifier |
141 |
IRF1324STRL-7PP |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free 7-Lead D2-Pak package |
International Rectifier |
142 |
IRF1324STRLPBF |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package |
International Rectifier |
143 |
IRF133 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
144 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
145 |
IRF133 |
12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs |
Intersil |
146 |
IRF133 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
147 |
IRF133 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 12A |
Siliconix |
148 |
IRF140 |
N-Channel Power MOSFETs/ 27 A/ 60-100V |
Fairchild Semiconductor |
149 |
IRF140 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
150 |
IRF140 |
28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET |
Intersil |
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