No. |
Part Name |
Description |
Manufacturer |
61 |
IRF1018ESLPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
62 |
IRF1018ESTRLPBF |
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
63 |
IRF1104 |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
64 |
IRF1104L |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
65 |
IRF1104LPBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
66 |
IRF1104PBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
67 |
IRF1104S |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
68 |
IRF1104STRL |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
69 |
IRF1104STRLPBF |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
70 |
IRF1104STRR |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
71 |
IRF120 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
72 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
73 |
IRF120 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
74 |
IRF120 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
75 |
IRF120 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
76 |
IRF120-123 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
77 |
IRF121 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
78 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
79 |
IRF121 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
80 |
IRF121 |
Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
81 |
IRF121 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
82 |
IRF122 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
83 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
84 |
IRF122 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
85 |
IRF122 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
86 |
IRF122 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
87 |
IRF123 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
88 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
89 |
IRF123 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
90 |
IRF123 |
Trans MOSFET N-CH 80V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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