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Datasheets for IRF1

Datasheets found :: 290
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No. Part Name Description Manufacturer
61 IRF1018ESLPBF 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
62 IRF1018ESTRLPBF 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
63 IRF1104 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
64 IRF1104L 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
65 IRF1104LPBF 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
66 IRF1104PBF 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
67 IRF1104S 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
68 IRF1104STRL 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
69 IRF1104STRLPBF 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
70 IRF1104STRR 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
71 IRF120 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
72 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
73 IRF120 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Intersil
74 IRF120 Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA New Jersey Semiconductor
75 IRF120 N-CHANNEL POWER MOSFETS Samsung Electronic
76 IRF120-123 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
77 IRF121 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
78 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
79 IRF121 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Intersil
80 IRF121 Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
81 IRF121 N-CHANNEL POWER MOSFETS Samsung Electronic
82 IRF122 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
83 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
84 IRF122 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Intersil
85 IRF122 Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
86 IRF122 N-CHANNEL POWER MOSFETS Samsung Electronic
87 IRF123 N-Channel Power MOSFETs/ 11 A/ 60-100 V Fairchild Semiconductor
88 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
89 IRF123 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs Intersil
90 IRF123 Trans MOSFET N-CH 80V 8A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor


Datasheets found :: 290
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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