| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N5064 |
Thyristor sensitive gate |
Philips |
| 122 |
2N5064 |
Sensitive SCRs |
Teccor Electronics |
| 123 |
2N5064RLRMG |
Sensitive Gate Silicon Controlled Rectifiers |
ON Semiconductor |
| 124 |
2N5065 |
400 V, 0.8 A sensitive SCR |
Teccor Electronics |
| 125 |
2N5273 |
Thyristors that can be fired at both voltage polarities (triacs) 25A 200V |
Texas Instruments |
| 126 |
2N5274 |
Thyristors that can be fired at both voltage polarities (triacs) 25A 400V |
Texas Instruments |
| 127 |
2N5275 |
Thyristors that can be fired at both voltage polarities (triacs) 25A 600V |
Texas Instruments |
| 128 |
2N5425 |
SFET RF/VHF/ UHF/ Amplitiers |
Fairchild Semiconductor |
| 129 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 130 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 131 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 132 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 133 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 134 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 135 |
2N554 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 136 |
2N555 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 137 |
2N5949 |
SFET RF/VHF/ UHF/ Amplitiers |
Fairchild Semiconductor |
| 138 |
2N5950 |
SFET RF/VHF/ UHF/ Amplitiers |
Fairchild Semiconductor |
| 139 |
2N5951 |
SFET RF/VHF/ UHF/ Amplitiers |
Fairchild Semiconductor |
| 140 |
2N5953 |
SFET RF/VHF/ UHF/ Amplitiers |
Fairchild Semiconductor |
| 141 |
2N6071 |
Sensitive Gate Triacs |
ON Semiconductor |
| 142 |
2N6071-D |
Sensitive Gate Triacs Silicon Bidirectional Thyristors |
ON Semiconductor |
| 143 |
2N6071A |
Sensitive Gate Triacs |
ON Semiconductor |
| 144 |
2N6071B |
Sensitive Gate Triacs |
ON Semiconductor |
| 145 |
2N6071BT |
Sensitive Gate Triacs |
ON Semiconductor |
| 146 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 147 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 148 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 149 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 150 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
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