No. |
Part Name |
Description |
Manufacturer |
31 |
13PD150-S |
The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
32 |
13PD150-ST |
The 13PD150-ST, -SMA, -FC, -SC, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header ... |
Anadigics Inc |
33 |
13PD150-TO |
The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region and packaged in a TO-46 header, is intended ... |
Anadigics Inc |
34 |
1B31 |
Wide Bandwidth Strain Gage Signal Conditioner |
Analog Devices |
35 |
1B31AN |
Wide Bandwidth Strain Gage Signal Conditioner |
Analog Devices |
36 |
1B31SD |
Wide Bandwidth Strain Gage Signal Conditioner |
Analog Devices |
37 |
1B32 |
Bridge Transducer Signal Conditioner |
Analog Devices |
38 |
1B32AN |
Bridge Transducer Signal Conditioner |
Analog Devices |
39 |
1B41 |
Isolated RTD Signal Conditioner |
Analog Devices |
40 |
1B41AN |
Isolated RTD Signal Conditioner |
Analog Devices |
41 |
1B41BN |
Isolated RTD Signal Conditioner |
Analog Devices |
42 |
1B51 |
Isolated mV/Thermocouple Signal Conditioner |
Analog Devices |
43 |
1B51AN |
Isolated mV/Thermocouple Signal Conditioner |
Analog Devices |
44 |
1B51BN |
Isolated mV/Thermocouple Signal Conditioner |
Analog Devices |
45 |
1L20 |
High Linearity Position Sensing Detector |
Laser Components |
46 |
1L20 |
High Linearity Position Sensing Detector |
Laser Components |
47 |
1L20 |
-High Linearity Position Sensing Detector |
Laser Components |
48 |
1N188 |
Photosensitive Device IR(dark)=20uA 40V, Sensitivity = 10uA/mW |
Motorola |
49 |
1N188 |
Photosensitive Device IR(dark)=20uA 40V, Sensitivity = 10uA/mW |
Motorola |
50 |
1N189 |
Photosensitive Device; RD=4,000 ohm, Sensitivity = 0.083%/fc |
Motorola |
51 |
1N189 |
Photosensitive Device; RD=4,000 ohm, Sensitivity = 0.083%/fc |
Motorola |
52 |
1N2175 |
Photosensitive Device IR(dark)=0.5µA 50V, Sensitivity=0.22µA/mW/cm2 |
Motorola |
53 |
1N2175 |
Photosensitive Device IR(dark)=0.5µA 50V, Sensitivity=0.22µA/mW/cm2 |
Motorola |
54 |
1N3734 |
Photosensitive Device BV=100V, Sensitivity=0.05µA/fc |
Motorola |
55 |
1N3734 |
Photosensitive Device BV=100V, Sensitivity=0.05µA/fc |
Motorola |
56 |
1N38AH |
Germanium Point Contact for Limitter Circuit, Small Capacitive Rectifier |
Hitachi Semiconductor |
57 |
1N4378 |
Photosensitive Device I(dark)=10nA Sensitivity=9.0mA Vce=5.0V H=9.0 mW/cm2 |
Motorola |
58 |
1N4378 |
Photosensitive Device I(dark)=10nA Sensitivity=9.0mA Vce=5.0V H=9.0 mW/cm2 |
Motorola |
59 |
1N5283 |
Leaded Current Limiting Diode JEDEC |
Central Semiconductor |
60 |
1N5284 |
Leaded Current Limiting Diode JEDEC |
Central Semiconductor |
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