No. |
Part Name |
Description |
Manufacturer |
121 |
STH310N10F7-6 |
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in H2PAK-6 package |
ST Microelectronics |
122 |
STH320N4F6-6 |
N-channel 40 V, 1.1 mOhm typ., 200 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-6 package |
ST Microelectronics |
123 |
STH400N4F6-6 |
Automotive-grade N-channel 40 V, 0.85 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-6 package |
ST Microelectronics |
124 |
TAK-610 KIT |
Strain Gage Application Kit for Transducers |
Vishay |
125 |
TMS320LC545APBK-66 |
Digital Signal Processor |
Texas Instruments |
126 |
UPB100474K-6 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns. |
NEC |
127 |
V53C518165AK-60 |
1M x 16 EDO page mode CMOS DRAM optional self refresh, 60ns |
Mosel Vitelic Corp |
128 |
V53C518165AK-60I |
1M x 16 EDO page mode CMOS DRAM optional self refresh, 60ns |
Mosel Vitelic Corp |
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