| No. |
Part Name |
Description |
Manufacturer |
| 61 |
HCPL-570K-600 |
Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
| 62 |
HCPL-570K-600 |
Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
| 63 |
HCPL-573K-600 |
Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers |
Agilent (Hewlett-Packard) |
| 64 |
IC1K-68RD-1.27SF |
PC Card Socket Connector Complies with PC card Standard |
Hirose Electric |
| 65 |
IC1K-68RD-1.27SFA |
PC Card Socket Connector Complies with PC card Standard |
Hirose Electric |
| 66 |
IC1K-68RD-1.27SFB |
PC Card Socket Connector Complies with PC card Standard |
Hirose Electric |
| 67 |
IC1K-68RD-1.27SH |
PC Card Socket Connector Complies with PC card Standard |
Hirose Electric |
| 68 |
IC1K-68RD-1.27SHA |
PC Card Socket Connector Complies with PC card Standard |
Hirose Electric |
| 69 |
IS6MC256K-60 |
256KB CMOS 3.1 COASt cache module for the intel pentium CPU |
Integrated Silicon Solution Inc |
| 70 |
IS6MC256K-66 |
256KB CMOS 3.1 COASt cache module for the intel pentium CPU |
Integrated Silicon Solution Inc |
| 71 |
KM44C4000CK-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 72 |
KM44C4003CK-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 73 |
KM44C4005CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 74 |
KM44C4100CK-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 75 |
KM44C4103CK-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 76 |
KM44C4105CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 77 |
KM44V4000CK-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 78 |
KM44V4100CK-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 79 |
KM48C2000BK-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 80 |
KM48C2100BK-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 81 |
KM48C8004BK-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns |
Samsung Electronic |
| 82 |
KM48C8104BK-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns |
Samsung Electronic |
| 83 |
KM48V2000BK-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 84 |
KM48V2100BK-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 85 |
KM48V8004BK-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 86 |
KM48V8004CK-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 87 |
KM48V8104BK-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 88 |
KM48V8104CK-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 89 |
P80C51 |
80C51 8-bit microcontroller family 8K-64K/256-1K OTP/ROM/ROMless, low voltage 2.7V-5.5V), low power, high speed (33 MHz) |
Philips |
| 90 |
P80C51FA-4A |
80C51 8-bit microcontroller family 8K-64K/256-1K OTP/ROM/ROMless, low voltage 2.7V-5.5V), low power, high speed (33 MHz) |
NXP Semiconductors |
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