No. |
Part Name |
Description |
Manufacturer |
121 |
HY62256ALLJ-55 |
32Kx8bit CMOS SRAM, standby current=25uA, 55ns |
Hynix Semiconductor |
122 |
HY62256ALLJ-70 |
32Kx8bit CMOS SRAM, standby current=25uA, 70ns |
Hynix Semiconductor |
123 |
HY62256ALLJ-85 |
32Kx8bit CMOS SRAM, standby current=25uA, 85ns |
Hynix Semiconductor |
124 |
KM416C256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
125 |
KM416C256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
126 |
KM416C256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
127 |
KM416V256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability |
Samsung Electronic |
128 |
KM416V256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability |
Samsung Electronic |
129 |
KM416V256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
130 |
KM41C4000DLJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
131 |
KM41C4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
132 |
KM41C4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
133 |
KM41V4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns |
Samsung Electronic |
134 |
KM41V4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns |
Samsung Electronic |
135 |
KM681002CLJ-10 |
128K x 8 high speed static RAM, 5V operating, 10ns, low power |
Samsung Electronic |
136 |
KM681002CLJ-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
137 |
KM681002CLJ-15 |
128K x 8 high speed static RAM, 5V operating, 15ns, low power |
Samsung Electronic |
138 |
KM681002CLJ-20 |
128K x 8 high speed static RAM, 5V operating, 20ns, low power |
Samsung Electronic |
139 |
KM68257CLJ-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
140 |
KM68257CLJ-15 |
32Kx8 bit high speed static RAM (5V operating), 15ns |
Samsung Electronic |
141 |
KM68257CLJ-20 |
32Kx8 bit high speed static RAM (5V operating), 20ns |
Samsung Electronic |
142 |
KM75C104ALJ-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
143 |
KM75C104ALJ-25 |
25 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
144 |
KM75C104ALJ-35 |
35 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
145 |
KM75C104ALJ-50 |
50 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
146 |
KSZ8041NLJ-TR |
Ethernet PHYs |
Microchip |
147 |
MI-P2LJ-IXA |
Military Chassis Mount DC-DC Converters 10 to 300W Single / Dual / Triple Outputs |
Vicor Corporation |
148 |
MI-P2LJ-IXV |
Military Chassis Mount DC-DC Converters 10 to 300W Single / Dual / Triple Outputs |
Vicor Corporation |
149 |
MI-P2LJ-IXW |
Military Chassis Mount DC-DC Converters 10 to 300W Single / Dual / Triple Outputs |
Vicor Corporation |
150 |
MI-P2LJ-IXX |
Military Chassis Mount DC-DC Converters 10 to 300W Single / Dual / Triple Outputs |
Vicor Corporation |
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