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Datasheets for LJ-

Datasheets found :: 299
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 GM71V17403CLJ-6 CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power Hynix Semiconductor
32 GM71V17403CLJ-7 CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power Hynix Semiconductor
33 GM71V18163CLJ-5 1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns Hynix Semiconductor
34 GM71V18163CLJ-6 1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns Hynix Semiconductor
35 GM71V18163CLJ-7 1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns Hynix Semiconductor
36 GM71VS17403CLJ-5 CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power Hynix Semiconductor
37 GM71VS17403CLJ-6 CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power Hynix Semiconductor
38 GM71VS17403CLJ-7 CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 70ns, low power Hynix Semiconductor
39 GM71VS18163CLJ-5 1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns Hynix Semiconductor
40 GM71VS18163CLJ-6 1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns Hynix Semiconductor
41 GM71VS18163CLJ-7 1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns Hynix Semiconductor
42 HM5117805LJ-5 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh Elpida Memory
43 HM514260ALJ-10 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
44 HM514260ALJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
45 HM514260ALJ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
46 HM514260CLJ-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
47 HM514260CLJ-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
48 HM514260CLJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
49 HM514260CLJ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
50 HM514400ALJ-6 1,048,576-word x 4-bid DRAM, 60ns Hitachi Semiconductor
51 HM514400ALJ-7 1,048,576-word x 4-bid DRAM, 70ns Hitachi Semiconductor
52 HM514400ALJ-8 1,048,576-word x 4-bid DRAM, 80ns Hitachi Semiconductor
53 HM514400ASLJ-6 1,048,576-word x 4-bid DRAM, 60ns Hitachi Semiconductor
54 HM514400ASLJ-7 1,048,576-word x 4-bid DRAM, 70ns Hitachi Semiconductor
55 HM514400ASLJ-8 1,048,576-word x 4-bid DRAM, 80ns Hitachi Semiconductor
56 HM514800ALJ-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
57 HM514800ALJ-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
58 HM514800CLJ-6 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
59 HM514800CLJ-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
60 HM514800CLJ-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor


Datasheets found :: 299
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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