| No. |
Part Name |
Description |
Manufacturer |
| 121 |
BLV30 |
VHF Linear Power NPN Transistor, warning - device incorporates beryllium oxide, the dust of which is toxic |
Philips |
| 122 |
BQ29312 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE |
Texas Instruments |
| 123 |
BQ29312APWG4 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 24-TSSOP -40 to 85 |
Texas Instruments |
| 124 |
BQ29312APWRG4 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 24-TSSOP -40 to 85 |
Texas Instruments |
| 125 |
BQ29312ARTHRG4 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE |
Texas Instruments |
| 126 |
BQ29312PW |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE |
Texas Instruments |
| 127 |
BQ29312PWG4 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 24-TSSOP -25 to 85 |
Texas Instruments |
| 128 |
BQ29312PWR |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE |
Texas Instruments |
| 129 |
BQ29312PWRG4 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 24-TSSOP -25 to 85 |
Texas Instruments |
| 130 |
BQ29330 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE |
Texas Instruments |
| 131 |
BQ29330DBT |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 30-TSSOP -40 to 110 |
Texas Instruments |
| 132 |
BQ29330DBTG4 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 30-TSSOP -40 to 110 |
Texas Instruments |
| 133 |
BQ29330DBTR |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 30-TSSOP -40 to 110 |
Texas Instruments |
| 134 |
BQ29330DBTRG4 |
Two, Three and Four Cell Lithium or Lithium-Polymer Battery Protection AFE 30-TSSOP -40 to 110 |
Texas Instruments |
| 135 |
BUF16820 |
14-Channel GAMMA VOLTAGE GENERATOR with Programmable Vcom Outputs and OTP Memory 32-HTSSOP -40 to 85 |
Texas Instruments |
| 136 |
BUF16820AIDAPR |
14-Channel GAMMA VOLTAGE GENERATOR with Programmable Vcom Outputs and OTP Memory 32-HTSSOP -40 to 85 |
Texas Instruments |
| 137 |
CAB4A |
DDR4RCD01 JEDEC compliant DDR4 Register for RDIMM and LRDIMM operation up to DDR4-2400 |
Texas Instruments |
| 138 |
CAB4AZNRR |
DDR4RCD01 JEDEC compliant DDR4 Register for RDIMM and LRDIMM operation up to DDR4-2400 253-NFBGA -40 to 95 |
Texas Instruments |
| 139 |
CC7, CCB |
30 x 30, 50 x 50 NiCr User Trim on Alumina |
Vishay |
| 140 |
CE-B1476 |
Half Half-size 486 ISA size 486 ISA-bus CPU Card bus CPU Card with 8M on with 8M on-board DRAM, VGA/LCD and D.O.C. board DRAM, VGA/LCD and D.O.C. |
etc |
| 141 |
CE-B1476 |
Half Half-size 486 ISA size 486 ISA-bus CPU Card bus CPU Card with 8M on with 8M on-board DRAM, VGA/LCD and D.O.C. board DRAM, VGA/LCD and D.O.C. |
etc |
| 142 |
CGY0918 |
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) |
Siemens |
| 143 |
CGY184 |
GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) |
Siemens |
| 144 |
CGY92 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier) |
Siemens |
| 145 |
CGY94 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V) |
Siemens |
| 146 |
CGY96 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| 147 |
CPH3314 |
Medium Output MOSFETs |
SANYO |
| 148 |
CPH3317 |
Medium Output MOSFETs |
SANYO |
| 149 |
CPH3318 |
Medium Output MOSFETs |
SANYO |
| 150 |
CPH3319 |
Medium Output MOSFETs |
SANYO |
| | | |
