No. |
Part Name |
Description |
Manufacturer |
211 |
DRV8881PRHRT |
2A Stepper Motor Driver with AutoTune (PWM or PH/EN Ctrl) 28-WQFN -40 to 125 |
Texas Instruments |
212 |
DS3231MZEVKIT |
Evaluation Kits for the DS3231M or DS3232M |
MAXIM - Dallas Semiconductor |
213 |
DS3231MZEVKIT# |
Evaluation Kits for the DS3231M or DS3232M |
MAXIM - Dallas Semiconductor |
214 |
DS3232MEVKIT |
Evaluation Kits for the DS3231M or DS3232M |
MAXIM - Dallas Semiconductor |
215 |
DS3232MEVKIT# |
Evaluation Kits for the DS3231M or DS3232M |
MAXIM - Dallas Semiconductor |
216 |
EB4 |
Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
217 |
EB4 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
218 |
EB6 |
Dual Readout, Standard and Right Angle Terminals, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
219 |
EB6 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
220 |
EB7 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
221 |
EB8 |
Dual Readout, Selective Gold Plating, Polarization Between Contact Positions, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524, Project 77CH3889) |
Vishay |
222 |
EB8 HI TEMP |
High Temp (Glass Reinforced), Dual Readout, High Reliability Copper-Nickel-Tin Alloy Contacts or Gold Contacts, Recognized Under the Component Program of Underwriters' Laboratories Inc (File E65524) |
Vishay |
223 |
EC4301C |
Medium Output MOSFETs |
SANYO |
224 |
EC4302C |
Medium Output MOSFETs |
SANYO |
225 |
EC4303C |
Medium Output MOSFETs |
SANYO |
226 |
EC4401C |
Medium Output MOSFETs |
SANYO |
227 |
EC4402C |
Medium Output MOSFETs |
SANYO |
228 |
EC4403C |
Medium Output MOSFETs |
SANYO |
229 |
ECH8305 |
Medium Output MOSFETs |
SANYO |
230 |
ECH8401 |
Medium Output MOSFETs |
SANYO |
231 |
ECH8402 |
Medium Output MOSFETs |
SANYO |
232 |
EDE1104AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
233 |
EDE1104AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
234 |
EDE1104AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
235 |
EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
236 |
EDE1108AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
237 |
EDE1108AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
238 |
EDE1108AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
239 |
EDE1108AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
240 |
EL6200C |
450 MHz HFM Oscillator |
Elantec Semiconductor |
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