No. |
Part Name |
Description |
Manufacturer |
121 |
24LC16BT-I/MSG |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
122 |
24LC16BT-I/OT |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
123 |
24LC16BT-I/OTG |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
124 |
24LC16BT-I/SN |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
125 |
24LC16BT-I/SNG |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
126 |
24LC16BT-I/ST |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
127 |
24LC16BT-I/STG |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
128 |
24LC16BT/SN |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
129 |
24LC16BT/ST |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
130 |
2502-2 |
MOUNTING BRACKET KIT INSTALLATION INSTRUCTIONS |
etc |
131 |
277 |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
132 |
277A |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
133 |
277J |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
134 |
277K |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
135 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
136 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
137 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
138 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
139 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
140 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
141 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
142 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
143 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
144 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
145 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
146 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
147 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
148 |
2SC5337-T1 |
New power mini(a product with gain improved of 2SC4536) |
NEC |
149 |
311M09 |
COMMISSION INTERNATIONALE DE KARTING - FIA |
etc |
150 |
35PD10M |
The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... |
Anadigics Inc |
| | | |