No. |
Part Name |
Description |
Manufacturer |
151 |
35PD1M-TO |
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... |
Anadigics Inc |
152 |
3606 |
Digitally Controlled Programmable gain instrumentation amplifier |
Burr Brown |
153 |
3606 |
Digitally-Controlled Programmable Gain Instrumentation Amplifier |
Texas Instruments |
154 |
3606A |
Digitally Controlled Programmable gain instrumentation amplifier |
Burr Brown |
155 |
3606B |
Digitally Controlled Programmable gain instrumentation amplifier |
Burr Brown |
156 |
3606BG |
Digitally-Controlled Programmable Gain Instrumentation Amplifier |
Texas Instruments |
157 |
363D |
LM363 Precision Instrumentation Amplifier |
National Semiconductor |
158 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
159 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
160 |
3PHASEPWM |
3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines |
International Rectifier |
161 |
40080 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
162 |
40081 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
163 |
40082 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
164 |
40446 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
165 |
40581 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
166 |
40582 |
Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits |
RCA Solid State |
167 |
41C16257 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
Integrated Silicon Solution Inc |
168 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
169 |
42S16800A |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
170 |
42S32200 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
171 |
5064BP |
Hex high voltage buffer with inhibit/non inverting type |
TOSHIBA |
172 |
5066BP |
7-high voltage buffer/non inverting type |
TOSHIBA |
173 |
52PF40 |
STANDARD RECOVERY DIODES GEN II DO5 |
International Rectifier |
174 |
52PF40W |
STANDARD RECOVERY DIODES GEN II DO5 |
International Rectifier |
175 |
52PF80 |
STANDARD RECOVERY DIODES GEN II DO5 |
International Rectifier |
176 |
52PF80W |
STANDARD RECOVERY DIODES GEN II DO5 |
International Rectifier |
177 |
52PFR40 |
STANDARD RECOVERY DIODES GEN II DO5 |
International Rectifier |
178 |
52PFR40W |
STANDARD RECOVERY DIODES GEN II DO5 |
International Rectifier |
179 |
52PFR80 |
STANDARD RECOVERY DIODES GEN II DO5 |
International Rectifier |
180 |
52PFR80W |
STANDARD RECOVERY DIODES GEN II DO5 |
International Rectifier |
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