Datasheets for N612

Datasheets found :: 397

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No.	Part Name	Description	Manufacturer
121	1N6129US	Transient Voltage Suppressor	Microsemi
122	1N6129US	Diode TVS Single Bi-Dir 69.2V 500W 2-Pin SMD	New Jersey Semiconductor
123	1N6129USe3	Standard Unidirectional and Bidirectional TVS	Microsemi
124	1N612A	Silicon Rectifier Diode 400V 0.8A	Motorola
125	2N612	Germanium PNP Transistor	Motorola
126	2N6121	Medium Power Linear and Switching Applications	Boca Semiconductor Corporation
127	2N6121	Leaded Power Transistor General Purpose	Central Semiconductor
128	2N6121	40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE.	Continental Device India Limited
129	2N6121	Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V.	General Electric Solid State
130	2N6121	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS	MOSPEC Semiconductor
131	2N6121	4A complementary silicon plastic 40W power NPN transistor	Motorola
132	2N6121	Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box	New Jersey Semiconductor
133	2N6121	Silicon NPN Power Transistors TO-220 package	Savantic
134	2N6121	Epitaxial-base transistor for linear and switching applications	SGS-ATES
135	2N6121A	Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box	New Jersey Semiconductor
136	2N6121B	Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box	New Jersey Semiconductor
137	2N6122	Medium Power Linear and Switching Applications	Boca Semiconductor Corporation
138	2N6122	Leaded Power Transistor General Purpose	Central Semiconductor
139	2N6122	40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE.	Continental Device India Limited
140	2N6122	Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V.	General Electric Solid State
141	2N6122	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS	MOSPEC Semiconductor
142	2N6122	4A complementary silicon plastic 40W power NPN transistor	Motorola
143	2N6122	Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-220 Box	New Jersey Semiconductor
144	2N6122	Silicon NPN Power Transistors TO-220 package	Savantic
145	2N6122	Epitaxial-base transistor for linear and switching applications	SGS-ATES
146	2N6123	Medium Power Linear and Switching Applications	Boca Semiconductor Corporation
147	2N6123	Leaded Power Transistor General Purpose	Central Semiconductor
148	2N6123	40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE.	Continental Device India Limited
149	2N6123	Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V.	General Electric Solid State
150	2N6123	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS	MOSPEC Semiconductor

Datasheets found :: 397

Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |