No. |
Part Name |
Description |
Manufacturer |
151 |
2N6123 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
152 |
2N6123 |
Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
153 |
2N6123 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
154 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
155 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
156 |
2N6124 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
157 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
158 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
159 |
2N6124 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
160 |
2N6124 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
161 |
2N6124 |
Trans GP BJT PNP 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
162 |
2N6124 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
163 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
164 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
165 |
2N6125 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
166 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
167 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
168 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
169 |
2N6125 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
170 |
2N6125 |
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
171 |
2N6125 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
172 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
173 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
174 |
2N6126 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
175 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
176 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
177 |
2N6126 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
178 |
2N6126 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
179 |
2N6126 |
Trans GP BJT PNP 80V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
180 |
2N6126 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
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