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Datasheets for N65

Datasheets found :: 2824
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 2N6512 Bipolar NPN Device SemeLAB
122 2N6513 Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
123 2N6513 Silicon NPN Power Transistors TO-3 package Savantic
124 2N6514 Trans GP BJT NPN 300V 7A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
125 2N6514 Silicon NPN Power Transistors TO-3 package Savantic
126 2N6515 Leaded Small Signal Transistor General Purpose Central Semiconductor
127 2N6515 0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE Continental Device India Limited
128 2N6515 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
129 2N6515 Ic=500mA, Vce=10V transistor MCC
130 2N6515 High Voltage Transistor 625mW Micro Commercial Components
131 2N6515 High voltage NPN transistor Motorola
132 2N6515 High Voltage Transistors ON Semiconductor
133 2N6515 NPN Epitaxial Silicon High Voltage Transistor Samsung Electronic
134 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
135 2N6515-D High Voltage Transistors ON Semiconductor
136 2N6515RLRM High Voltage Transistors ON Semiconductor
137 2N6516 Leaded Small Signal Transistor General Purpose Central Semiconductor
138 2N6516 0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE Continental Device India Limited
139 2N6516 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
140 2N6516 High voltage NPN transistor Motorola
141 2N6516 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
142 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
143 2N6517 Leaded Small Signal Transistor General Purpose Central Semiconductor
144 2N6517 0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE Continental Device India Limited
145 2N6517 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
146 2N6517 Ic=500mA, Vce=10V transistor MCC
147 2N6517 High Voltage Transistor 625mW Micro Commercial Components
148 2N6517 High voltage NPN transistor Motorola
149 2N6517 High Voltage Transistors ON Semiconductor
150 2N6517 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic


Datasheets found :: 2824
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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