Datasheets for N65

Datasheets found :: 2793

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No.	Part Name	Description	Manufacturer
121	2N6515	High Voltage Transistors	ON Semiconductor
122	2N6515	High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
123	2N6515-D	High Voltage Transistors	ON Semiconductor
124	2N6515RLRM	High Voltage Transistors	ON Semiconductor
125	2N6516	Leaded Small Signal Transistor General Purpose	Central Semiconductor
126	2N6516	0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE	Continental Device India Limited
127	2N6516	NPN Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
128	2N6516	NPN EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
129	2N6516	High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
130	2N6517	Leaded Small Signal Transistor General Purpose	Central Semiconductor
131	2N6517	0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE	Continental Device India Limited
132	2N6517	NPN Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
133	2N6517	Ic=500mA, Vce=10V transistor	MCC
134	2N6517	High Voltage Transistor 625mW	Micro Commercial Components
135	2N6517	High Voltage Transistors	ON Semiconductor
136	2N6517	NPN EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
137	2N6517	High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
138	2N6517	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR	Zetex Semiconductors
139	2N6517BU	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
140	2N6517CBU	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
141	2N6517CTA	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
142	2N6517RLRA	High Voltage Transistors	ON Semiconductor
143	2N6517RLRP	High Voltage Transistors	ON Semiconductor
144	2N6517TA	NPN Epitaxial Silicon Transistor	Fairchild Semiconductor
145	2N6518	Leaded Small Signal Transistor General Purpose	Central Semiconductor
146	2N6518	PNP Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
147	2N6518	PNP EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
148	2N6518	High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W.	USHA India LTD
149	2N6518BU	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
150	2N6518TA	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor

Datasheets found :: 2793

Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |