No. |
Part Name |
Description |
Manufacturer |
121 |
2N6512 |
Bipolar NPN Device |
SemeLAB |
122 |
2N6513 |
Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
123 |
2N6513 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
124 |
2N6514 |
Trans GP BJT NPN 300V 7A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
125 |
2N6514 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
126 |
2N6515 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
127 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
128 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
129 |
2N6515 |
Ic=500mA, Vce=10V transistor |
MCC |
130 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
131 |
2N6515 |
High voltage NPN transistor |
Motorola |
132 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
133 |
2N6515 |
NPN Epitaxial Silicon High Voltage Transistor |
Samsung Electronic |
134 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
135 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
136 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
137 |
2N6516 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
138 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
139 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
140 |
2N6516 |
High voltage NPN transistor |
Motorola |
141 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
142 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
143 |
2N6517 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
144 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
145 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
146 |
2N6517 |
Ic=500mA, Vce=10V transistor |
MCC |
147 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
148 |
2N6517 |
High voltage NPN transistor |
Motorola |
149 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
150 |
2N6517 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
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