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Datasheets for N65

Datasheets found :: 2793
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 2N6519 Leaded Small Signal Transistor General Purpose Central Semiconductor
152 2N6519 0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE Continental Device India Limited
153 2N6519 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
154 2N6519 Ic=500mA, Vce=10V transistor MCC
155 2N6519 High Voltage Transistor 625mW Micro Commercial Components
156 2N6519 High Voltage Transistors ON Semiconductor
157 2N6519 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronic
158 2N6519 High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
159 2N6519BU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
160 2N6519RLRA High Voltage Transistors ON Semiconductor
161 2N6519TA PNP Epitaxial Silicon Transistor Fairchild Semiconductor
162 2N651A PNP Germanium transistor in the audio-frequency range applications Motorola
163 2N651A Germanium PNP Transistor Motorola
164 2N651A Trans GP BJT PNP 0.5A New Jersey Semiconductor
165 2N652 PNP Germanium transistor in the audio-frequency range applications Motorola
166 2N652 Germanium PNP Transistor Motorola
167 2N652 Trans GP BJT PNP 0.5A New Jersey Semiconductor
168 2N6520 Leaded Small Signal Transistor General Purpose Central Semiconductor
169 2N6520 0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE Continental Device India Limited
170 2N6520 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Diodes
171 2N6520 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
172 2N6520 Ic=500mA, Vce=10V transistor MCC
173 2N6520 High Voltage Transistor 625mW Micro Commercial Components
174 2N6520 High Voltage Transistors ON Semiconductor
175 2N6520 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronic
176 2N6520 High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
177 2N6520 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Zetex Semiconductors
178 2N6520BU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
179 2N6520RL1 High Voltage Transistors ON Semiconductor
180 2N6520RLRA High Voltage Transistors ON Semiconductor


Datasheets found :: 2793
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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