DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for N65

Datasheets found :: 2824
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
152 2N6517 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Zetex Semiconductors
153 2N6517BU NPN Epitaxial Silicon Transistor Fairchild Semiconductor
154 2N6517CBU NPN Epitaxial Silicon Transistor Fairchild Semiconductor
155 2N6517CTA NPN Epitaxial Silicon Transistor Fairchild Semiconductor
156 2N6517RLRA High Voltage Transistors ON Semiconductor
157 2N6517RLRP High Voltage Transistors ON Semiconductor
158 2N6517TA NPN Epitaxial Silicon Transistor Fairchild Semiconductor
159 2N6518 Leaded Small Signal Transistor General Purpose Central Semiconductor
160 2N6518 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
161 2N6518 High voltage PNP transistor Motorola
162 2N6518 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronic
163 2N6518 High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
164 2N6518BU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
165 2N6518TA PNP Epitaxial Silicon Transistor Fairchild Semiconductor
166 2N6519 Leaded Small Signal Transistor General Purpose Central Semiconductor
167 2N6519 0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE Continental Device India Limited
168 2N6519 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
169 2N6519 Ic=500mA, Vce=10V transistor MCC
170 2N6519 High Voltage Transistor 625mW Micro Commercial Components
171 2N6519 High voltage PNP transistor Motorola
172 2N6519 High Voltage Transistors ON Semiconductor
173 2N6519 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronic
174 2N6519 High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
175 2N6519BU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
176 2N6519RLRA High Voltage Transistors ON Semiconductor
177 2N6519TA PNP Epitaxial Silicon Transistor Fairchild Semiconductor
178 2N651A PNP Germanium transistor in the audio-frequency range applications Motorola
179 2N651A Germanium PNP Transistor Motorola
180 2N651A Trans GP BJT PNP 0.5A New Jersey Semiconductor


Datasheets found :: 2824
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



© 2024 - www Datasheet Catalog com