No. |
Part Name |
Description |
Manufacturer |
151 |
2N6519 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
152 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
153 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
154 |
2N6519 |
Ic=500mA, Vce=10V transistor |
MCC |
155 |
2N6519 |
High Voltage Transistor 625mW |
Micro Commercial Components |
156 |
2N6519 |
High Voltage Transistors |
ON Semiconductor |
157 |
2N6519 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
158 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
159 |
2N6519BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
160 |
2N6519RLRA |
High Voltage Transistors |
ON Semiconductor |
161 |
2N6519TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
162 |
2N651A |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
163 |
2N651A |
Germanium PNP Transistor |
Motorola |
164 |
2N651A |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
165 |
2N652 |
PNP Germanium transistor in the audio-frequency range applications |
Motorola |
166 |
2N652 |
Germanium PNP Transistor |
Motorola |
167 |
2N652 |
Trans GP BJT PNP 0.5A |
New Jersey Semiconductor |
168 |
2N6520 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
169 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
170 |
2N6520 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
171 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
172 |
2N6520 |
Ic=500mA, Vce=10V transistor |
MCC |
173 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
174 |
2N6520 |
High Voltage Transistors |
ON Semiconductor |
175 |
2N6520 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
176 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
177 |
2N6520 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
178 |
2N6520BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
179 |
2N6520RL1 |
High Voltage Transistors |
ON Semiconductor |
180 |
2N6520RLRA |
High Voltage Transistors |
ON Semiconductor |
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