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Datasheets for NG V

Datasheets found :: 2236
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No. Part Name Description Manufacturer
121 BBY32DA Microwave tuning varactors for frequencies up to the GHz range Siemens
122 BBY32DB Microwave tuning varactors for frequencies up to the GHz range Siemens
123 BBY32EA Microwave tuning varactors for frequencies up to the GHz range Siemens
124 BBY32FA Microwave tuning varactors for frequencies up to the GHz range Siemens
125 BBY33BB-2 Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) Siemens
126 BBY33BB-2 Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) Siemens
127 BBY33DA-2 Silicon Tuning Varactor (Abrupt junction tuning diode Tuning range 25 V High figure of merit) Siemens
128 BBY34C Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 � 12 V) Siemens
129 BBY34D Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 � 12 V) Siemens
130 BBY35F Silicon Tuning Varactor (Hyperabrupt junction tuning diode Frequency linear tuning range 4 � 12 V) Siemens
131 BBY51 Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) Siemens
132 BBY51-03W Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) Siemens
133 BBY51-07 Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation Siemens
134 BBY52 Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) Siemens
135 BBY52-03W Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) Siemens
136 BBY53 Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) Siemens
137 BBY53-02W Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) Siemens
138 BBY53-03W Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) Siemens
139 BC110 NPN Silicon Transistor for AF amplifier stages with high operating voltage Siemens
140 BF1005 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
141 BF1005S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
142 BF1009 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
143 BF1009S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
144 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
145 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
146 BF2030 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
147 BF2030W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
148 BF2040 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
149 BF2040W Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Siemens
150 BFY65 Silicon NPN Planar Transistor with high blocking voltage, especially for controlling number display tubes TELEFUNKEN


Datasheets found :: 2236
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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