| No. |
Part Name |
Description |
Manufacturer |
| 91 |
AN6306S |
VTR Recording Video Signal Processing Circuits |
Panasonic |
| 92 |
AN6310 |
VTR Recording Video Signal Processing Circuit |
Matsushita Electric Works(Nais) |
| 93 |
AN7580 |
25W (6 ohm) x 2-channel BTL power amplifier built-in standby and muting features incporporating various protection circuits |
Panasonic |
| 94 |
AN8585SH |
Cellular Telephone PLL IC Incorporating VCO |
Panasonic |
| 95 |
AN8586SH |
Cellular Telephone PLL IC Incorporationg VCO |
Panasonic |
| 96 |
AN8587SH |
Cellular Telephone PLL IC Incorporating VCO |
Panasonic |
| 97 |
APPLICATION-NOTE |
NEC electronic tuning varactor diodes |
NEC |
| 98 |
ASIDKV6522 |
SILICON HYPERABRUPT TUNING VARACTOR DIODE |
Advanced Semiconductor |
| 99 |
ASIKV2801 |
SILICON HYPERABRUPT TUNING VARACTOR |
Advanced Semiconductor |
| 100 |
ASIMV1863D |
SILICON ABRUPT TUNING VARACTOR DIODE |
Advanced Semiconductor |
| 101 |
AT83C51SND1 |
C51 Microcontroller with Embedded MP3 Decoder and 64 Kbytes ROM. MultiMediaCard�, DataFlash�, SmartMedia�, CompactFlash� and IDE Interfaces. SPI and Two-wire Interface (TWI). USB 1.1. Voice Recording. Low Power. In-System Programming via U |
Atmel |
| 102 |
AT89C51SND1 |
C51 Microcontroller with Embedded MP3 Decoder and 64 Kbytes Flash. MultiMediaCard�, DataFlash�, SmartMedia�, CompactFlash� and IDE Interfaces. SPI and Two-wire Interface (TWI). USB 1.1. Voice Recording. Low Power. In-System Programming via |
Atmel |
| 103 |
BA187 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 104 |
BA188 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 105 |
BA189 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 106 |
BA190 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 107 |
BAY17 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 108 |
BAY18 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 109 |
BAY19 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 110 |
BAY20 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 111 |
BBY24 |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 112 |
BBY24-BBY27 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 113 |
BBY24-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 114 |
BBY25 |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 115 |
BBY25-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 116 |
BBY26 |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 117 |
BBY26-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 118 |
BBY27 |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| 119 |
BBY27-S2 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) |
Siemens |
| 120 |
BBY32CB |
Microwave tuning varactors for frequencies up to the GHz range |
Siemens |
| | | |
