No. |
Part Name |
Description |
Manufacturer |
121 |
BSM50GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
122 |
BSM50GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
123 |
BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
124 |
BSM50GD120DN2E3226 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
125 |
BSM75GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
126 |
BSM75GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
127 |
BSV81 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
128 |
BTA12 |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
129 |
BTA12-200B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
130 |
BTA12-50B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
131 |
BTA12-600B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated |
New Jersey Semiconductor |
132 |
BTA12-600BS |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
133 |
BTA12-600CW |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated |
New Jersey Semiconductor |
134 |
BTA12-600SW |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated |
New Jersey Semiconductor |
135 |
BTA12-800B |
Thyristor TRIAC 800V 126A 3-Pin(3+Tab) TO-220AB Insulated |
New Jersey Semiconductor |
136 |
BTW69-1200N |
50 A - 1200 V non-insulated SCR thyristor |
ST Microelectronics |
137 |
BUK854-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
138 |
BUK856-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
139 |
BUK856-800 |
Insulated Gate Bipolar Transistor IGBT |
Philips |
140 |
BUK856-800A |
Insulated Gate Bipolar Transistor IGBT |
Philips |
141 |
BUK866-400IZ |
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT |
Philips |
142 |
C67070-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
143 |
C67070-A2120-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
144 |
C67070-A2300-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
145 |
C67070-A2301-A70 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
146 |
C67070-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
147 |
C67070-A2701-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
148 |
C67070-A2702-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
149 |
C67070-A2703-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
150 |
C67070-A2704-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
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