No. |
Part Name |
Description |
Manufacturer |
31 |
40603 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
32 |
40604 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
33 |
40673 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, up to 400MHz |
RCA Solid State |
34 |
40820 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for RF amplifier |
RCA Solid State |
35 |
40821 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for Mixer |
RCA Solid State |
36 |
40822 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, for RF amplifiers |
RCA Solid State |
37 |
40823 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, for Mixers |
RCA Solid State |
38 |
40841 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor from DC to 500MHz |
RCA Solid State |
39 |
AC10DSMA |
10A resin insulated TRIAC |
NEC |
40 |
AC10FSMA |
10A resin insulated TRIAC |
NEC |
41 |
ACCESSORIES |
Mica discs, insulated bushings clamping plate, cooling clamps, mounting kit for transistors 56218, spacer washers 56245 56246 |
VALVO |
42 |
AN856 |
TRIPLE GALVANIC INSULATED HIGH SIDE DRIVING WITH TD310 |
SGS Thomson Microelectronics |
43 |
BAS28 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
44 |
BAS28W |
Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) |
Siemens |
45 |
BAW100 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
46 |
BAW101 |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
Siemens |
47 |
BCR08AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
48 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
49 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
50 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
51 |
BCR10CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
52 |
BCR10CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
53 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
54 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
55 |
BCR12 |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
56 |
BCR12CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
57 |
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
58 |
BCR12CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
59 |
BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
60 |
BCR12PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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