| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2SB415 |
Audio Frequency Transistor |
TOSHIBA |
| 122 |
2SB434 |
Audio Frequency Transistor |
TOSHIBA |
| 123 |
2SB435 |
Audio Frequency Transistor |
TOSHIBA |
| 124 |
2SB439 |
Audio Frequency Transistor |
TOSHIBA |
| 125 |
2SB440 |
Audio Frequency Transistor |
TOSHIBA |
| 126 |
2SB459 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 127 |
2SB460 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 128 |
2SB463 |
Audio Frequency Transistor |
TOSHIBA |
| 129 |
2SB471 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 130 |
2SB471 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 131 |
2SB472 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 132 |
2SB472 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 133 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 134 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 135 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 136 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 137 |
2SB539A |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 138 |
2SB539B |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 139 |
2SB539C |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 140 |
2SB54 |
Audio Frequency Transistor |
TOSHIBA |
| 141 |
2SB541 |
Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor |
NEC |
| 142 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
| 143 |
2SB56 |
Audio Frequency Transistor |
TOSHIBA |
| 144 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 145 |
2SB598 |
FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS |
SANYO |
| 146 |
2SB600 |
Audio frequency power amplifier silicon triple diffused transistor |
NEC |
| 147 |
2SB624 |
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 148 |
2SB624R |
PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers |
NEC |
| 149 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
| 150 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
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