| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SA495 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 62 |
2SA496 |
Audio Frequency Transistor |
TOSHIBA |
| 63 |
2SA497 |
Audio Frequency Transistor |
TOSHIBA |
| 64 |
2SA498 |
Audio Frequency Transistor |
TOSHIBA |
| 65 |
2SA505 |
Audio Frequency Transistor |
TOSHIBA |
| 66 |
2SA509 |
Audio Frequency Transistor |
TOSHIBA |
| 67 |
2SA52 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 68 |
2SA53 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 69 |
2SA561 |
Audio Frequency Transistor |
TOSHIBA |
| 70 |
2SA562 |
Audio Frequency Transistor |
TOSHIBA |
| 71 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 72 |
2SA564 |
Audio Frequency Small Signal Transistors |
Semiconductor Technology |
| 73 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 74 |
2SA661 |
Audio Frequency Transistor |
TOSHIBA |
| 75 |
2SA663 |
Audio Frequency Transistor |
TOSHIBA |
| 76 |
2SA811 |
Audio frequency high gain amplifier PNP silicon epitaxial transistor |
NEC |
| 77 |
2SA811A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 78 |
2SA812 |
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 79 |
2SA812R |
PNP silicon epitaxial transistor, audio frequency |
NEC |
| 80 |
2SA817 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 81 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
| 82 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 83 |
2SB1015 |
Silicon PNP triple diffused audio frequency power transistor |
TOSHIBA |
| 84 |
2SB1015 |
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 85 |
2SB1015A |
Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Applications |
TOSHIBA |
| 86 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 87 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 88 |
2SB1375 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
| 89 |
2SB1475 |
PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER |
NEC |
| 90 |
2SB156 |
Germanium PNP Transistor Alloyed Junction Vcbo=-16V, Vebo=-2.5V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
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