No. |
Part Name |
Description |
Manufacturer |
121 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
122 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
123 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
124 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
125 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
126 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
127 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
128 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
129 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
130 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
131 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
132 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
133 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
134 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
135 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
136 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
137 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
138 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
139 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
140 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
141 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
142 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
143 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
144 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
145 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
146 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
147 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
148 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
149 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
150 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
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