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Datasheets for OR L

Datasheets found :: 5241
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No. Part Name Description Manufacturer
91 2N3789 Epitaxial-base transistor for linear and switching applications SGS-ATES
92 2N3790 Epitaxial-base transistor for linear and switching applications SGS-ATES
93 2N3791 Epitaxial-base transistor for linear and switching applications SGS-ATES
94 2N3792 Epitaxial-base transistor for linear and switching applications SGS-ATES
95 2N3796 Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range Motorola
96 2N3797 Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range Motorola
97 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
98 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
99 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
100 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
101 2N3961 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
102 2N4072 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
103 2N4073 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
104 2N4248 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
105 2N4249 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
106 2N4250 Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
107 2N4250A Silicon PNP Transistors designed for low level - low nosie amplifier applications Central Semiconductor
108 2N4264 NPN silicon transistor designed for low-level, saturated logic applications Motorola
109 2N4265 NPN silicon transistor designed for low-level, saturated logic applications Motorola
110 2N5086 PNP silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
111 2N5087 PNP silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
112 2N5088 NPN silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
113 2N5089 NPN silicon annular transistor designed for low-level, low-noise amplifier applications Motorola
114 2N508A PNP Germanium Milliwatt transistor designed for low noise audio and switching applications Motorola
115 2N5179 Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz SGS-ATES
116 2N5190 Epitaxial-base transistor for linear and switching applications SGS-ATES
117 2N5191 Epitaxial-base transistor for linear and switching applications SGS-ATES
118 2N5192 Epitaxial-base transistor for linear and switching applications SGS-ATES
119 2N5193 Epitaxial-base transistor for linear and switching applications SGS-ATES
120 2N5194 Epitaxial-base transistor for linear and switching applications SGS-ATES


Datasheets found :: 5241
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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