No. |
Part Name |
Description |
Manufacturer |
91 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
92 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
93 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
94 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
95 |
2N3796 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
96 |
2N3797 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
97 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
98 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
99 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
100 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
101 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
102 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
103 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
104 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
105 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
106 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
107 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
108 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
109 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
110 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
111 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
112 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
113 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
114 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
115 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
116 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
117 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
118 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
119 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
120 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
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