No. |
Part Name |
Description |
Manufacturer |
121 |
GT250/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
122 |
GT400/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
123 |
HFCN-740 |
Ceramic High Pass Filter 900 to 2800 MHz |
Mini-Circuits |
124 |
HFCN-740D |
Ceramic High Pass Filter 900 to 2800 MHz |
Mini-Circuits |
125 |
LC90A |
Diode TVS Single Uni-Dir 90V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
126 |
MAX2235 |
+3.6V, 1W Autoramping Power Amplifier for 900MHz Applications |
MAXIM - Dallas Semiconductor |
127 |
MAX2235EUP |
+3.6V, 1W Autoramping Power Amplifier for 900MHz Applications |
MAXIM - Dallas Semiconductor |
128 |
MAX2235EUP+ |
+3.6V, 1W Autoramping Power Amplifier for 900MHz Applications |
MAXIM - Dallas Semiconductor |
129 |
MAX2235EUP+T |
+3.6V, 1W Autoramping Power Amplifier for 900MHz Applications |
MAXIM - Dallas Semiconductor |
130 |
MAX2235EUP-T |
+3.6V, 1W Autoramping Power Amplifier for 900MHz Applications |
MAXIM - Dallas Semiconductor |
131 |
MAX2601 |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
132 |
MAX2601-MAX2602 |
3.6V / 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
133 |
MAX2601ESA |
3.6V / 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
134 |
MAX2601ESA+ |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
135 |
MAX2601ESA+T |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
136 |
MAX2602 |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
137 |
MAX2602E/D |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
138 |
MAX2602ESA |
3.6V / 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
139 |
MAX2602ESA+ |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
140 |
MAX2602ESA+T |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
141 |
MP110B |
25 Ampere PNP ADE Germanium Power Switching Transistor 90V, 106W |
Motorola |
142 |
MPC9259 |
LVDS CLK Synthesizer 900 MHz Low Voltage LVDS Clock Synthesizer |
Motorola |
143 |
MRF897R_D |
MRF897R 900 MHz, 30 W, 24 V RF Power Transistor - Archived |
Motorola |
144 |
P5KE90 |
Diode TVS Single Uni-Dir 90V 500W 2-Pin DO-41 |
New Jersey Semiconductor |
145 |
P5KE90A |
Diode TVS Single Uni-Dir 90V 500W 2-Pin DO-41 |
New Jersey Semiconductor |
146 |
P5KE90C |
Diode TVS Single Bi-Dir 90V 500W 2-Pin DO-41 |
New Jersey Semiconductor |
147 |
PH1819-90 |
Wireless Power Transistor 90 Watts, 1805-1880 MHz |
Tyco Electronics |
148 |
PH1920-90 |
Wireless Power Transistor 90 Watts, 1930-1990 MHz |
Tyco Electronics |
149 |
PTF080901 |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
150 |
PTF080901E |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
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