No. |
Part Name |
Description |
Manufacturer |
31 |
30KP90A |
Diode TVS Single Uni-Dir 90V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
32 |
30KP90C |
Diode TVS Single Bi-Dir 90V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
33 |
30KP90CA |
Diode TVS Single Bi-Dir 90V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
34 |
30KPA90 |
Diode TVS Single Uni-Dir 90V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
35 |
30KPA90A |
Diode TVS Single Uni-Dir 90V 30KW 2-Pin |
New Jersey Semiconductor |
36 |
30KPA90C |
Diode TVS Single Bi-Dir 90V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
37 |
30KPA90CA |
Diode TVS Single Bi-Dir 90V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
38 |
5KP90 |
Diode TVS Single Uni-Dir 90V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
39 |
5KP90A |
Diode TVS Single Uni-Dir 90V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
40 |
5KP90C |
Diode TVS Single Bi-Dir 90V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
41 |
5KP90CA |
Diode TVS Single Bi-Dir 90V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
42 |
8090 |
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz |
Infineon |
43 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
44 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
45 |
BD805 |
10A power NPN silicon transistor 90W 45V |
Motorola |
46 |
BD806 |
10A power PNP silicon transistor 90W 45V |
Motorola |
47 |
BD807 |
10A power NPN silicon transistor 90W 60V |
Motorola |
48 |
BD809 |
10A power NPN silicon transistor 90W 80V |
Motorola |
49 |
BDV91 |
25A complementary silicon power NPN transistor 90W 60V |
Motorola |
50 |
BDV92 |
25A complementary silicon power PNP transistor 90W 60V |
Motorola |
51 |
BDV93 |
25A complementary silicon power NPN transistor 90W 80V |
Motorola |
52 |
BDV94 |
25A complementary silicon power PNP transistor 90W 80V |
Motorola |
53 |
BDV95 |
25A complementary silicon power NPN transistor 90W 100V |
Motorola |
54 |
BDV96 |
25A complementary silicon power PNP transistor 90W 100V |
Motorola |
55 |
BDX62 |
12A peak darlington complementary silicon power PNP transistor 90W 60V |
Motorola |
56 |
BDX62A |
12A peak darlington complementary silicon power PNP transistor 90W 80V |
Motorola |
57 |
BDX62B |
12A peak darlington complementary silicon power PNP transistor 90W 100V |
Motorola |
58 |
BDX63 |
12A peak darlington complementary silicon power NPN transistor 90W 60V |
Motorola |
59 |
BDX63A |
12A peak darlington complementary silicon power NPN transistor 90W 80V |
Motorola |
60 |
BDX63B |
12A peak darlington complementary silicon power NPN transistor 90W 100V |
Motorola |
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