| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 122 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 123 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 124 |
2N4223 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 125 |
2N4224 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 126 |
2N4233A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 127 |
2N4347 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 128 |
2N4348 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 129 |
2N441 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 130 |
2N442 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 131 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 132 |
2N443 |
PNP germanium power transistor, Power and temperature exceed EIA registration |
Motorola |
| 133 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 134 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 135 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 136 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 137 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 138 |
2N4906 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 139 |
2N508 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 140 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 141 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 142 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 143 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 144 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 145 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 146 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 147 |
2N5294 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132 |
SESCOSEM |
| 148 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
| 149 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
| 150 |
2N5490 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
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