| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 92 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 93 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 94 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 95 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 96 |
2N3740 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 97 |
2N3741 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 98 |
2N3771 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 99 |
2N3772 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 100 |
2N3773 |
NPN Power transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 101 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 102 |
2N3790 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 103 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 104 |
2N3791 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 105 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 106 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 107 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 108 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 109 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 110 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 111 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 112 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 113 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 114 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 115 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 116 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 117 |
2N4033 |
GENERAL PURPOSE AMPLIFIER AND SWITCH |
SGS Thomson Microelectronics |
| 118 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 119 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 120 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| | | |
