| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2SC5507-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 122 |
2SC5508 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 123 |
2SC5508-T2 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 124 |
2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 125 |
2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE � HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD |
NEC |
| 126 |
2SC5620 |
For Low Frequency Amplify Application Sillcon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 127 |
2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 128 |
2SC5815 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 129 |
2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 130 |
2SC5817 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 131 |
2SC5938 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 132 |
2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 133 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 134 |
2SC6026CT |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 135 |
2SC6026MFV |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 136 |
2SC6100 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 137 |
2SC6133 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 138 |
2SC6134 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 139 |
2SC6135 |
Transistor for low frequency small-signal amplification |
TOSHIBA |
| 140 |
2SD2636 |
Power transistor for low frequency applications |
TOSHIBA |
| 141 |
2SD2686 |
Power transistor for low frequency applications |
TOSHIBA |
| 142 |
2SD2719 |
Power transistor for low frequency applications |
TOSHIBA |
| 143 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 144 |
2SD525 |
Power transistor for low frequency applications |
TOSHIBA |
| 145 |
2SD798 |
Power transistor for low frequency applications |
TOSHIBA |
| 146 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 147 |
2SD882 |
NPN medium power low vow voltage transistor |
Unisonic Technologies |
| 148 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
| 149 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
| 150 |
2SJ56 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK176 |
Hitachi Semiconductor |
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