No. |
Part Name |
Description |
Manufacturer |
31 |
2023-6134-10 |
8-12.4 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
32 |
2023-6135-20 |
8-12.4 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
33 |
2023-6136-06 |
12.4-18 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
34 |
2023-6137-10 |
12.4-18 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
35 |
2023-6138-20 |
12.4-18 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
36 |
24LLC02 |
2K-Bit Serial EEPROM for Low Power |
Ceramate |
37 |
24LLC02A |
2K-bit Serial EEPROM for Low Power |
Ceramate |
38 |
24LLC02T |
2K-bit Serial EEPROM for Low Power |
Ceramate |
39 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
40 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
41 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
42 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
43 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
44 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
45 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
46 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
47 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
48 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
49 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
50 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
51 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
52 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
53 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
54 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
55 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
56 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
57 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
58 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
59 |
2N7014 |
MOSPOWER N-Channel Enhancement Mode Transistor low gate threshold 100V 3.5A |
Siliconix |
60 |
2SA1282 |
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
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