No. |
Part Name |
Description |
Manufacturer |
121 |
1N4619 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
122 |
1N4619-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
123 |
1N4620 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
124 |
1N4620-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
125 |
1N4621 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
126 |
1N4621-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
127 |
1N4622 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
128 |
1N4622-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
129 |
1N4623 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
130 |
1N4623-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
131 |
1N4624 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
132 |
1N4624-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
133 |
1N4625 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
134 |
1N4625-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
135 |
1N4626 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
136 |
1N4626-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
137 |
1N4627 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
138 |
1N4627-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
139 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
140 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
141 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
142 |
285D |
Foil Tantalum Replacement, Gelled-Electrolyte Sintered Anode Tantalex, for Operation to + 125°C, Hermetically-Sealed |
Vishay |
143 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
144 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
145 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
146 |
2N1751 |
PNP Germanium power transistor, low saturation voltage |
Motorola |
147 |
2N2217 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
148 |
2N2218 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
149 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
150 |
2N2220 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
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