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Datasheets for RATION

Datasheets found :: 10318
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No. Part Name Description Manufacturer
151 2N2221 NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage Amelco Semiconductor
152 2N2222 NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage Amelco Semiconductor
153 2N2222B NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage Amelco Semiconductor
154 2N2285 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
155 2N2286 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
156 2N2287 PNP Germanium power transistor low satturation voltage, fast switching times Motorola
157 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
158 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
159 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
160 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
161 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
162 2N2357 PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times Motorola
163 2N2358 PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times Motorola
164 2N2359 PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times Motorola
165 2N4212 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
166 2N4213 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
167 2N4214 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
168 2N4215 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
169 2N4216 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
170 2N5016 UHF Power Generation Using RF Power Transistor - Application Note RCA Solid State
171 2N5431 Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits Motorola
172 2N5470 UHF Power Generation Using RF Power Transistor - Application Note RCA Solid State
173 2N5919 UHF Power Generation Using RF Power Transistor - Application Note RCA Solid State
174 2SA1598 Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) Shindengen
175 2SA1599 Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) Shindengen
176 2SA1600 Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) Shindengen
177 2SA1601 Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) Shindengen
178 2SA1679 Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) Shindengen
179 2SA1795 Low-Saturation Voltage Switching Transistors / LSV Series (Surface Mount) Shindengen
180 2SA1795 Low-saturation high-speed voltage switching bipolar transistor Shindengen


Datasheets found :: 10318
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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