| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1S2579 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
| 122 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
| 123 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
| 124 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
| 125 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
| 126 |
1S2584 |
Silicon diffused junction rectifier 3A 400V |
TOSHIBA |
| 127 |
1S2585 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
| 128 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
| 129 |
1S2615 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 130 |
1S2616 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 131 |
1S2617 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
| 132 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 133 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 134 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 135 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 136 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 137 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 138 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 139 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 140 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 141 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 142 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 143 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 144 |
1S84 |
Silicon Diffused Rectifier |
Hitachi Semiconductor |
| 145 |
1S84H |
Silicon Diffused for High Voltage Switching |
Hitachi Semiconductor |
| 146 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 147 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 148 |
1Z100 |
Silicon diffused type zener diode. Typ zener voltage 100 V. |
Panasonic |
| 149 |
1Z110 |
Silicon diffused type zener diode. Typ zener voltage 110 V. |
Panasonic |
| 150 |
1Z150 |
Silicon diffused type zener diode. Typ zener voltage 150 V. |
Panasonic |
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