| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 32 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 33 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 34 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 35 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 36 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 37 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 38 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 39 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 40 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 41 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 42 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 43 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 44 |
1S84 |
Silicon Diffused Rectifier |
Hitachi Semiconductor |
| 45 |
1S84H |
Silicon Diffused for High Voltage Switching |
Hitachi Semiconductor |
| 46 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 47 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 48 |
1Z100 |
Silicon diffused type zener diode. Typ zener voltage 100 V. |
Panasonic |
| 49 |
1Z110 |
Silicon diffused type zener diode. Typ zener voltage 110 V. |
Panasonic |
| 50 |
1Z150 |
Silicon diffused type zener diode. Typ zener voltage 150 V. |
Panasonic |
| 51 |
1Z180 |
Silicon diffused type zener diode. Typ zener voltage 180 V. |
Panasonic |
| 52 |
1Z330 |
Silicon diffused type zener diode. Typ zener voltage 330 V. |
Panasonic |
| 53 |
1Z390 |
Silicon diffused type zener diode. Typ zener voltage 390 V. |
Panasonic |
| 54 |
2-BDY20 |
N-P-N Silicon Diffused Power Transistor |
Mullard |
| 55 |
2-BDY38 |
N-P-N Silicon Diffused Power Transistor |
Mullard |
| 56 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 57 |
2SD1403 |
Silicon Diffused Power Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 58 |
2SD1427 |
Silicon Diffused Power Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 59 |
2SD1577 |
Silicon Diffused Power Transistor |
Wing Shing Computer Components |
| 60 |
2SD1650 |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
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