| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 122 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 123 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 124 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 125 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 126 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 127 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
| 128 |
150CMQ035 |
35V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 129 |
150CMQ040 |
40V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 130 |
150CMQ045 |
45V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 131 |
150CNQ045 |
45V 150A Schottky Common Cathode Diode in a D-60 package |
International Rectifier |
| 132 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 133 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 134 |
151CMQ035 |
35V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 135 |
151CMQ040 |
40V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 136 |
151CMQ045 |
45V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 137 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 138 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 139 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 140 |
1528-6 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 141 |
1528-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 142 |
152CMQ030 |
30V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 143 |
1530-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 144 |
1530-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 145 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 146 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 147 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 148 |
1538-8 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 149 |
153CMQ080 |
80V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 150 |
153CMQ100 |
100V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
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