| No. |
Part Name |
Description |
Manufacturer |
| 31 |
102 |
0.5/2.5 GHz UHF LO BUFFER AMPLIFIER |
SGS Thomson Microelectronics |
| 32 |
103 |
0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS |
SGS Thomson Microelectronics |
| 33 |
104 |
0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS |
SGS Thomson Microelectronics |
| 34 |
10CTQ150 |
150V 10A Schottky Common Cathode Diode in a TO-220AB package |
International Rectifier |
| 35 |
10CTQ150-1 |
150V 10A Schottky Common Cathode Diode in a TO-262 package |
International Rectifier |
| 36 |
10CTQ150S |
150V 10A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
| 37 |
10CTQ150STRL |
150V 10A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
| 38 |
10CTQ150STRR |
150V 10A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
| 39 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
| 40 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
| 41 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
| 42 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
| 43 |
10SI2 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V |
IPRS Baneasa |
| 44 |
10SI3 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 300V |
IPRS Baneasa |
| 45 |
10SI4 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V |
IPRS Baneasa |
| 46 |
10SI5 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V |
IPRS Baneasa |
| 47 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
| 48 |
10SI7 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 700V |
IPRS Baneasa |
| 49 |
10SI8 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 800V |
IPRS Baneasa |
| 50 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 51 |
110CNQ045A |
45V 110A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 52 |
110CNQ045ASL |
45V 110A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 53 |
110CNQ045ASM |
45V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 54 |
111CNQ045A |
45V 110A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 55 |
111CNQ045ASL |
45V 110A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 56 |
111CNQ045ASM |
45V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 57 |
112CNQ030A |
30V 110A Schottky Common Cathode Diode in a D61-8 package |
International Rectifier |
| 58 |
112CNQ030ASL |
30V 110A Schottky Common Cathode Diode in a D61-8-SL package |
International Rectifier |
| 59 |
112CNQ030ASM |
30V 110A Schottky Common Cathode Diode in a D61-8-SM package |
International Rectifier |
| 60 |
1134-5 |
RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS |
SGS Thomson Microelectronics |
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