No. |
Part Name |
Description |
Manufacturer |
121 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
122 |
2N6052 |
PNP Darlington Transistor |
Microsemi |
123 |
2N6052 |
12A Darlington complementary silicon power PNP Transistor 150W |
Motorola |
124 |
2N6052 |
Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
125 |
2N6052 |
Power 12A 100V Darlington PNP |
ON Semiconductor |
126 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
127 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
128 |
2N6052-D |
Darlington Complementary Silicon Power Transistors |
ON Semiconductor |
129 |
2N6052E3 |
Darlington Transistors |
Microsemi |
130 |
2N6052G |
Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
131 |
2N6053 |
Darlington 8A complementary silicon power PNP transistor |
Motorola |
132 |
2N6053 |
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR |
New Jersey Semiconductor |
133 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
134 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
135 |
2N6054 |
Darlington 8A complementary silicon power PNP transistor |
Motorola |
136 |
2N6054 |
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR |
New Jersey Semiconductor |
137 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
138 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
139 |
2N6055 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
140 |
2N6055 |
Darlington 8A complementary silicon power NPN transistor |
Motorola |
141 |
2N6055 |
Trans Darlington NPN/PNP 60V 8A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
142 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
143 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
144 |
2N6055A |
Trans Darlington NPN/PNP 60V 8A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
145 |
2N6056 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
146 |
2N6056 |
Darlington 8A complementary silicon power NPN transistor |
Motorola |
147 |
2N6056 |
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR |
New Jersey Semiconductor |
148 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
149 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
150 |
2N6056-D |
NPN Darlington Silicon Power Transistor |
ON Semiconductor |
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