No. |
Part Name |
Description |
Manufacturer |
151 |
2N6057 |
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
Boca Semiconductor Corporation |
152 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
153 |
2N6057 |
12A Darlington complementary silicon power NPN Transistor 150W |
Motorola |
154 |
2N6057 |
Trans Darlington NPN 60V 12A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
155 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
156 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
157 |
2N6058 |
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
Boca Semiconductor Corporation |
158 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
159 |
2N6058 |
NPN Darlington Transistor |
Microsemi |
160 |
2N6058 |
12A Darlington complementary silicon power NPN Transistor 150W |
Motorola |
161 |
2N6058 |
Trans Darlington NPN 80V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
162 |
2N6058 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
ON Semiconductor |
163 |
2N6058 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
164 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
165 |
2N6058E3 |
Darlington Transistors |
Microsemi |
166 |
2N6059 |
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
Boca Semiconductor Corporation |
167 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
168 |
2N6059 |
NPN Darlington Transistor |
Microsemi |
169 |
2N6059 |
12A Darlington complementary silicon power NPN Transistor 150W |
Motorola |
170 |
2N6059 |
Trans Darlington NPN 100V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
171 |
2N6059 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
ON Semiconductor |
172 |
2N6059 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
173 |
2N6059 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
174 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
175 |
2N6059 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR |
ST Microelectronics |
176 |
2N6059E3 |
Darlington Transistors |
Microsemi |
177 |
2N6282 |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
178 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
179 |
2N6282 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
180 |
2N6282 |
Trans Darlington NPN 60V 20A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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