No. |
Part Name |
Description |
Manufacturer |
121 |
NTE472 |
Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz |
NTE Electronics |
122 |
NTE473 |
Silicon NPN Transistor RF Power Driver |
NTE Electronics |
123 |
NTE475 |
Silicon NPN Transistor RF Power Output |
NTE Electronics |
124 |
NTE476 |
Silicon NPN Transistor RF Power Output |
NTE Electronics |
125 |
NTE477 |
Silicon NPN Transistor RF Power Output |
NTE Electronics |
126 |
NTE478 |
Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz |
NTE Electronics |
127 |
NTE480 |
Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz |
NTE Electronics |
128 |
NTE483 |
Silicon NPN Transistor RF Power Output for Mobile Use, PO = 18W @ 866MHz |
NTE Electronics |
129 |
NTE484 |
Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz |
NTE Electronics |
130 |
NTE486 |
Silicon NPN Transistor RF High Frequency Amplifier |
NTE Electronics |
131 |
NTE488 |
Silicon NPN Transistor RF Power Output |
NTE Electronics |
132 |
NTE78 |
Silicon NPN Transistor RF Power Output |
NTE Electronics |
133 |
PEMB10 |
PNP resistor-equipped double transistor R1 = 2.2 kOhm, R2 = 47 kOhm |
Philips |
134 |
PEMB2 |
PNP resistor-equipped double transistor R1 = 47 kOhm, R2 = 47 kOhm |
Philips |
135 |
PEMB3 |
PNP resistor-equipped double transistor R1 = 4.7 kOhm, R2 = open |
Philips |
136 |
PEMB4 |
PNP resistor-equipped double transistor R1 = 10 kOhm, R2 = open |
Philips |
137 |
PEMH4 |
NPN resistor equipped transistor R1 = 10 kOhm/R2 = open |
Philips |
138 |
QRB1113 |
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR |
Fairchild Semiconductor |
139 |
QRB1114 |
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR |
Fairchild Semiconductor |
140 |
QRB1133 |
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR |
Fairchild Semiconductor |
141 |
QRB1134 |
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR |
Fairchild Semiconductor |
142 |
QRC1133 |
PHOTOTRANSISTOR REFLECTIVE OBJECT SENSORS |
Fairchild Semiconductor |
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