No. |
Part Name |
Description |
Manufacturer |
61 |
2N916 |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
62 |
2N916A |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
63 |
2N918 |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
64 |
2N923 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
65 |
2N924 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
66 |
2N925 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
67 |
2N926 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
68 |
2N927 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
69 |
2N928 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
70 |
2N935 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
71 |
2N936 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
72 |
2N937 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
73 |
2N938 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
74 |
2N939 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
75 |
2N940 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
76 |
2SC101 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
77 |
2SC102 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
78 |
2SC106 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
79 |
2SC107 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
80 |
2SC1590 |
Silicon NPN Transistor RF Power Output |
Unknow |
81 |
2SC161 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
82 |
2SC21 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
83 |
2SC481 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
84 |
2SC502 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
85 |
2SC520A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
86 |
2SC521A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
87 |
AN-6229 |
Microwave Power-Transistor Reliability as a Function of Current Denisity and Junction Temperature - Application Note |
RCA Solid State |
88 |
CT60AM-18B |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE |
Mitsubishi Electric Corporation |
89 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
90 |
DS_K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
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