No. |
Part Name |
Description |
Manufacturer |
61 |
2SC481 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
62 |
2SC502 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
63 |
2SC520A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
64 |
2SC521A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
65 |
CT60AM-18B |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE |
Mitsubishi Electric Corporation |
66 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
67 |
DS_K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
68 |
FJH301/7426N |
Quadruple 4-input NAND gate with open collector output transistor rated at 15V |
Mullard |
69 |
FJH311/7401AN |
Quadruple 4-input NAND gate with open collector output transistor rated at 15V |
Mullard |
70 |
FJH321/7405AN |
Sextuple single-input inverter gate with open collector output transistor rated at 15V |
Mullard |
71 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
72 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
73 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
74 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
75 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
76 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
77 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
78 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
79 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
80 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
81 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
82 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
83 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
84 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
85 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
86 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
87 |
NTE160 |
Germanium PNP Transistor RF-IF Amp, FM Mixer OSC |
NTE Electronics |
88 |
NTE16002 |
Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz |
NTE Electronics |
89 |
NTE16003 |
Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz |
NTE Electronics |
90 |
NTE195A |
Silicon NPN Transistor RF Power Amp/Driver, CB |
NTE Electronics |
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