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Datasheets for TRANSISTOR R

Datasheets found :: 142
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
61 2SC481 High-Frequency Transistor RF POWER AMP TOSHIBA
62 2SC502 High-Frequency Transistor RF POWER AMP TOSHIBA
63 2SC520A High-Frequency Transistor RF POWER AMP TOSHIBA
64 2SC521A High-Frequency Transistor RF POWER AMP TOSHIBA
65 CT60AM-18B MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE Mitsubishi Electric Corporation
66 DS_K1S161611A 1Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
67 DS_K1S16161CA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
68 FJH301/7426N Quadruple 4-input NAND gate with open collector output transistor rated at 15V Mullard
69 FJH311/7401AN Quadruple 4-input NAND gate with open collector output transistor rated at 15V Mullard
70 FJH321/7405AN Sextuple single-input inverter gate with open collector output transistor rated at 15V Mullard
71 K1B6416B6C 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Samsung Electronic
72 K1S161611A 1Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
73 K1S161611A-I 1Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
74 K1S16161CA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
75 K1S16161CA-I 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
76 K1S1616BCA 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
77 K1S321611C 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
78 K1S321611C-FI70 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
79 K1S321611C-I 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
80 K1S32161CC 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
81 K1S32161CC-FI70 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
82 K1S32161CC-I 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
83 K1S3216B1C 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
84 K1S3216B1C-I 2Mx16 bit Uni-Transistor Random Access Memory Samsung Electronic
85 K1S3216BCD 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
86 K1S64161CC 4Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
87 NTE160 Germanium PNP Transistor RF-IF Amp, FM Mixer OSC NTE Electronics
88 NTE16002 Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz NTE Electronics
89 NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz NTE Electronics
90 NTE195A Silicon NPN Transistor RF Power Amp/Driver, CB NTE Electronics


Datasheets found :: 142
Page: | 1 | 2 | 3 | 4 | 5 |



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