| No. |
Part Name |
Description |
Manufacturer |
| 12301 |
2N5542 |
Silicon NPN Power Transistor, TO-61 package |
Silicon Transistor Corporation |
| 12302 |
2N5542 |
Silicon NPN Power Transistor, TO-61 package |
Silicon Transistor Corporation |
| 12303 |
2N5543 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 12304 |
2N5544 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 12305 |
2N5545 |
Dual N-Channel Junction Field-Effect Transistor |
CCSIT-CE |
| 12306 |
2N5545 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 12307 |
2N5545 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 12308 |
2N5546 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 12309 |
2N5546 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 12310 |
2N5547 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 12311 |
2N5547 |
Dual N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 12312 |
2N5548 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 12313 |
2N5549 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 12314 |
2N5549 |
N-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
| 12315 |
2N555 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 12316 |
2N555 |
Germanium PNP Transistor |
Motorola |
| 12317 |
2N5550 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 12318 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
| 12319 |
2N5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12320 |
2N5550 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 12321 |
2N5550 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 12322 |
2N5550 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 12323 |
2N5550 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 12324 |
2N5550 |
Amplifier Transistors |
Motorola |
| 12325 |
2N5550 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 12326 |
2N5550 |
NPN high-voltage transistors |
Philips |
| 12327 |
2N5550 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 12328 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 12329 |
2N5550 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 12330 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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