| No. |
Part Name |
Description |
Manufacturer |
| 12331 |
2N5550-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 12332 |
2N5550BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12333 |
2N5550S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 12334 |
2N5550TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12335 |
2N5550TAR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12336 |
2N5550TF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12337 |
2N5550TFR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12338 |
2N5550_D26Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12339 |
2N5550_J24Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12340 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 12341 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
| 12342 |
2N5551 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 12343 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 12344 |
2N5551 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 12345 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 12346 |
2N5551 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 12347 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 12348 |
2N5551 |
Amplifier Transistors |
Motorola |
| 12349 |
2N5551 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 12350 |
2N5551 |
NPN high-voltage transistors |
Philips |
| 12351 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 12352 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 12353 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 12354 |
2N5551-T |
Transistor |
Rectron Semiconductor |
| 12355 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
| 12356 |
2N5551HR |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 12357 |
2N5551HRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 12358 |
2N5551HRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 12359 |
2N5551RHRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 12360 |
2N5551RHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
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