| No. |
Part Name |
Description |
Manufacturer |
| 12511 |
MG1041 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 12512 |
MG1042 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 12513 |
MG1043 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 12514 |
MG1044 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 12515 |
MG1045 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 12516 |
MG1046 |
Pulsed Epi-Up Gunn Diodes |
Microsemi |
| 12517 |
MG1052 |
CW Epi-Up Gunn Diodes |
Microsemi |
| 12518 |
MG1054 |
CW Epi-Up Gunn Diodes |
Microsemi |
| 12519 |
MG1056 |
CW Epi-Up Gunn Diodes |
Microsemi |
| 12520 |
MG1058 |
CW Epi-Up Gunn Diodes |
Microsemi |
| 12521 |
MG1059 |
CW Epi-Up Gunn Diodes |
Microsemi |
| 12522 |
MH0810 |
EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT |
Micro Electronics |
| 12523 |
MH8100 |
EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT |
Micro Electronics |
| 12524 |
MJ1000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 12525 |
MJ1001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 12526 |
MJ15003 |
Silicon N-P-N epitaxial-base high power transistor. 140V, 250W. |
General Electric Solid State |
| 12527 |
MJ15004 |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. |
General Electric Solid State |
| 12528 |
MJ15015 |
Silicon Epitaxial Planar Transistor |
Wing Shing Computer Components |
| 12529 |
MJ15022 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
| 12530 |
MJ15024 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
| 12531 |
MJ2500 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
| 12532 |
MJ2500 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 12533 |
MJ2501 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
| 12534 |
MJ2501 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 12535 |
MJ2955 |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. |
General Electric Solid State |
| 12536 |
MJ3000 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
| 12537 |
MJ3000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 12538 |
MJ3001 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
| 12539 |
MJ3001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 12540 |
MJ900 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
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