No. |
Part Name |
Description |
Manufacturer |
12601 |
MJE200TSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12602 |
MJE210 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12603 |
MJE210 |
-40 V, -5 A, PNP epitaxial silicon transistor |
Samsung Electronic |
12604 |
MJE210STU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12605 |
MJE2955T |
SILICON EPITAXIAL PLANAR TRANSISTOR |
Wing Shing Computer Components |
12606 |
MJE3055 |
SILICON EPITAXIAL PLANAR TRANSISTOR |
Wing Shing Computer Components |
12607 |
MJE3055T |
SILICON EPITAXIAL PLANAR TRANSISTOR |
Wing Shing Computer Components |
12608 |
MJE340 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12609 |
MJE340 |
300 V, 500 A, NPN epitaxial silicon transistor |
Samsung Electronic |
12610 |
MJE340STU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12611 |
MJE350 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12612 |
MJE350 |
-300 V, -500 A, PNP epitaxial silicon transistor |
Samsung Electronic |
12613 |
MJE350STU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
12614 |
MJE370 |
PNP Epitaxial Power Transistor |
National Semiconductor |
12615 |
MJE371 |
PNP Epitaxial Power Transistor |
National Semiconductor |
12616 |
MJE520 |
NPN Epitaxial Power Transistor |
National Semiconductor |
12617 |
MJE521 |
NPN Epitaxial Power Transistor |
National Semiconductor |
12618 |
MJE700 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
12619 |
MJE700 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
12620 |
MJE700 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
12621 |
MJE700STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
12622 |
MJE701 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
12623 |
MJE701 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
12624 |
MJE701 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
12625 |
MJE701STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
12626 |
MJE702 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
12627 |
MJE702 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
12628 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
12629 |
MJE702STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
12630 |
MJE703 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
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