| No. |
Part Name |
Description |
Manufacturer |
| 1261 |
1S1837 |
Silicon diffused junction rectifier, High Voltage Rectifier for Color Television Receivers Application (Doubler Circuits) |
TOSHIBA |
| 1262 |
1S1920 |
Silicon Diffused Junction Diode used for TV Horizontal Deflection Damper |
Hitachi Semiconductor |
| 1263 |
1S1921A |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V |
Hitachi Semiconductor |
| 1264 |
1S1921B |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V |
Hitachi Semiconductor |
| 1265 |
1S1921C |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V |
Hitachi Semiconductor |
| 1266 |
1S1921D |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V |
Hitachi Semiconductor |
| 1267 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
| 1268 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 1269 |
1S2074 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1270 |
1S2074H |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1271 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 1272 |
1S2075 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1273 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1274 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 1275 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 1276 |
1S2090 |
Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC |
Hitachi Semiconductor |
| 1277 |
1S2091 |
Silicon epitaxial planar diode, Phase Detector Application for color TV |
TOSHIBA |
| 1278 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1279 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1280 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1281 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1282 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1283 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1284 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1285 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1286 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1287 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1288 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1289 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1290 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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