| No. |
Part Name |
Description |
Manufacturer |
| 1291 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1292 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1293 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1294 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1295 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1296 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1297 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1298 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1299 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1300 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1301 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 1302 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 1303 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 1304 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 1305 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1306 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1307 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1308 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1309 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1310 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1311 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1312 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1313 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1314 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1315 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1316 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1317 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1318 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1319 |
1S77 |
Germanium Gold Bond for TV Horizontal Deflection Oscillator stage damper |
Hitachi Semiconductor |
| 1320 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| | | |
