| No. |
Part Name |
Description |
Manufacturer |
| 1261 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 1262 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 1263 |
2N3441 |
Medium power silicon N-P-N transistor. 160V, 25W. |
General Electric Solid State |
| 1264 |
2N3442 |
High voltage silicon N-P-N transistor. 160V, 117W. |
General Electric Solid State |
| 1265 |
2N3773 |
High voltage, high power transistor. 160V, 150W. |
General Electric Solid State |
| 1266 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 1267 |
2N4160 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
| 1268 |
2N4160 |
THYRISTOR |
Motorola |
| 1269 |
2N5160 |
PNP silicon RF power transistor for military and industrial equipment |
Motorola |
| 1270 |
2N5160 |
Silicon PNP Transistor |
Motorola |
| 1271 |
2N5160 |
PNP Silicon RF Power Transistor |
New Jersey Semiconductor |
| 1272 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1273 |
2N550 |
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
| 1274 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1275 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 1276 |
2N5551 |
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 1277 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 1278 |
2N5551HR |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1279 |
2N5551HRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1280 |
2N5551HRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1281 |
2N5551RHRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1282 |
2N5551RHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1283 |
2N5551RUBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1284 |
2N5551RUBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1285 |
2N5551SHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1286 |
2N5551UB1 |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1287 |
2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1288 |
2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 1289 |
2N5879 |
POWER TRANSISTORS(15A,160W) |
MOSPEC Semiconductor |
| 1290 |
2N5879 |
15A Complementary Silicon Power PNP Transistor 160W |
Motorola |
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